Samsung Builds 10.7Gbps LPDDR5X DRAM for AI Applications

Samsung Electronics has announced the development of the industry's first LPDDR5X DRAM, which supports the performance of up to 10.7 gigabits per second.

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Using 12 nanometer (nm)-class process technology, Samsung has achieved the lowest chip size among existing LPDDRs.

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Samsung's 10.7Gbps LPDDR5X improves performance by more than 25% and capacity by more than 30% over the previous generation.

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The device also increases the single package capacity of mobile DRAM to 32 gigabytes (GB), making it an ideal solution for the on-device AI era.

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Mass manufacturing of the 10.7Gbps LPDDR5X is expected to commence in the second part of the year.

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Samsung Builds 10.7Gbps LPDDR5X DRAM for AI Applications

Samsung Electronics has announced the development of the industry's first LPDDR5X DRAM, which supports the performance of up to 10.7 gigabits per second.

Using 12 nanometer (nm)-class process technology, Samsung has achieved the lowest chip size among existing LPDDRs.

Samsung's 10.7Gbps LPDDR5X improves performance by more than 25% and capacity by more than 30% over the previous generation.

The device also increases the single package capacity of mobile DRAM to 32 gigabytes (GB), making it an ideal solution for the on-device AI era.

Mass manufacturing of the 10.7Gbps LPDDR5X is expected to commence in the second part of the year.

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